Global GaN Semiconductor Devices Market Outlook 2021

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure.
The global gallium nitride semiconductor device market for opto-semiconductor device type held the largest market share. This is attributed to its wide application in consumer and enterprise, industrial, and automotive industry. Gallium nitride light-emitting diodes (LEDs) are widely used in laptop and notebook display, mobile display, projectors, televisions and monitor, signs and large displays, etc. Gallium nitride LEDs are also used for the interior and exterior lighting in the automotive industry such as headlights and signal lights, car interior lighting, fog lights, stop lights, and dome lights, etc.

Market Analysis and Insights: Global GaN Semiconductor Devices Market
The global GaN Semiconductor Devices market size is projected to reach US$ 18590 million by 2026, from US$ 14960 million in 2020, at a CAGR of 3.7% during 2021-2026.
This report focuses on GaN Semiconductor Devices volume and value at the global level, regional level and company level. From a global perspective, this report represents overall GaN Semiconductor Devices market size by analysing historical data and future prospect. Regionally, this report focuses on several key regions: North America, Europe, Japan, China, Southeast Asia, India, etc.

Global GaN Semiconductor Devices Market: Segment Analysis
The research report includes specific segments by region (country), by company, by Type and by Application. This study provides information about the sales and revenue during the historic and forecasted period of 2015 to 2026. Understanding the segments helps in identifying the importance of different factors that aid the market growth.

Segment by Type
Opto Semiconductor
Power Semiconductor
RF Semiconductor

Segment by Application
Telecommunication
Industrial
Automotive
Consumer Electronics
Military, Defense, and Aerospace
Medical
Other

Global GaN Semiconductor Devices Market: Regional Analysis
The report offers in-depth assessment of the growth and other aspects of the GaN Semiconductor Devices market in important regions, including the U.S., Canada, Germany, France, U.K., Italy, Russia, China, Japan, South Korea, Taiwan, Southeast Asia, Mexico, and Brazil, etc. Key regions covered in the report are North America, Europe, Asia-Pacific and Latin America.
The report has been curated after observing and studying various factors that determine regional growth such as economic, environmental, social, technological, and political status of the particular region. Analysts have studied the data of revenue, production, and manufacturers of each region. This section analyses region-wise revenue and volume for the forecast period of 2015 to 2026. These analyses will help the reader to understand the potential worth of investment in a particular region.

Global GaN Semiconductor Devices Market:

Competitive Landscape

This section of the report identifies various key manufacturers of the market. It helps the reader understand the strategies and collaborations that players are focusing on combat competition in the market. The comprehensive report provides a significant microscopic look at the market. The reader can identify the footprints of the manufacturers by knowing about the global revenue of manufacturers, the global price of manufacturers, and production by manufacturers during the forecast period of 2015 to 2019.
The major players in the market include Cree, Infineon, Qorvo, Macom, Microchip Technology, Mitsubishi Electric, Efficient Power Conversion (EPC), GaN Systems, Nichia, Epistar, Transphorm, Visic Technologies, Analog Devices, Texas Instruments, Sumitomo Electric, Samsung, Northrop Grumman Corporation, Integra Technologies, Navitas Semiconductor, Panasonic, etc.

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