Global Gallium Nitride Power Device Market Insights and Forecast to 2026

SKU ID : QYR- 15898931

Publishing Date : 07-Jul-2020

No. of pages : 119

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  • Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap (energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity.

    Market Analysis and Insights: Global Gallium Nitride Power Device Market
    The global Gallium Nitride Power Device market size is projected to reach US$ 73760 million by 2026, from US$ 69980 million in 2020, at a CAGR of 5.0%% during 2021-2026.

    Global Gallium Nitride Power Device Scope and Segment
    Gallium Nitride Power Device market is segmented by Type, and by Application. Players, stakeholders, and other participants in the global Gallium Nitride Power Device market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2015-2026.

    Segment by Type, the Gallium Nitride Power Device market is segmented into
    Power Device
    RF Power Device

    Segment by Application, the Gallium Nitride Power Device market is segmented into
    Telecommunications
    Automotive
    Industrial
    Medical
    Military, Defense& Aerospace
    Others

    Regional and Country-level Analysis
    The Gallium Nitride Power Device market is analysed and market size information is provided by regions (countries).
    The key regions covered in the Gallium Nitride Power Device market report are North America, Europe, China, Japan and South Korea. It also covers key regions (countries), viz, the U.S., Canada, Germany, France, U.K., Italy, Russia, China, Japan, South Korea, India, Australia, Taiwan, Indonesia, Thailand, Malaysia, Philippines, Vietnam, Mexico, Brazil, Turkey, Saudi Arabia, U.A.E, etc.
    The report includes country-wise and region-wise market size for the period 2015-2026. It also includes market size and forecast by Type, and by Application segment in terms of production capacity, price and revenue for the period 2015-2026.

    Competitive Landscape

    and Gallium Nitride Power Device Market Share Analysis

    Gallium Nitride Power Device market competitive landscape provides details and data information by manufacturers. The report offers comprehensive analysis and accurate statistics on production capacity, price, revenue of Gallium Nitride Power Device by the player for the period 2015-2020. It also offers detailed analysis supported by reliable statistics on production, revenue (global and regional level) by players for the period 2015-2020. Details included are company description, major business, company total revenue, and the production capacity, price, revenue generated in Gallium Nitride Power Device business, the date to enter into the Gallium Nitride Power Device market, Gallium Nitride Power Device product introduction, recent developments, etc.
    The major vendors covered:
    Cree Inc
    Efficient Power Conversion (EPC) Corporation
    Infineon Technologies
    GaN Systems Inc
    Macom
    Microchip Technology Corporation
    Mitsubishi Electric Corporation
    Navitas Semiconductor
    Qorvo, Inc
    Toshiba

    Frequently Asked Questions



    This market study covers the global and regional market with an in-depth analysis of the overall growth prospects in the market. Furthermore, it sheds light on the comprehensive competitive landscape of the global market. The report further offers a dashboard overview of leading companies encompassing their successful marketing strategies, market contribution, recent developments in both historic and present contexts.

    • By product type
    • By End User/Applications
    • By Technology
    • By Region

    The report provides a detailed evaluation of the market by highlighting information on different aspects which include drivers, restraints, opportunities, and threats. This information can help stakeholders to make appropriate decisions before investing.
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