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Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor. Because GaN transistors can operate at much higher temperatures and work at much higher voltages than gallium arsenide (GaAs) transistors, they make ideal power amplifiers at microwave frequencies. GaN on GaN substrate have homo-substrate as the base whereas the templates have the GaN film over the foreign substrates.
The global Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market was valued at US$ 863 million in 2023 and is anticipated to reach US$ 1283.3 million by 2030, witnessing a CAGR of 5.8% during the forecast period 2024-2030.
5G is a key and cross-age technology that opens the era of the Internet of Everything, and all countries are grabbing market share. The Global Mobile Economy Development Report 2023 released by GSMA Intelligence pointed out that by the end of 2022, the number of global mobile users would exceed 5.4 billion. The mobile ecosystem supports 16 million jobs directly and 12 million jobs indirectly.
China is a leader in 5G technology. According to the latest statistics from the Ministry of Industry and Information Technology, China newly added 887,000 5G base stations in 2022 (currently reaching 2.312 million, accounting for more than 60% of the world's total), and 110 cities in China have reached gigabit city construction standard. According to the Digital China Development Report (2022) released by the State Internet Information Office, by the end of 2022, China had built a total of 2.312 million 5G base stations, with 561 million 5G users, accounting for more than 60% of the world.
This report aims to provide a comprehensive presentation of the global market for Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation), with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation).
Report Scope
The Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market size, estimations, and forecasts are provided in terms of output/shipments (Tons) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.
Market Segmentation
By Company
Cree Inc.
Mitsubishi Chemical
Kyocera Corporation
Plessey Semiconductors
IQE lpc
MonoCrystal
Sumco Corp
Sumitomo Electric Industries, Ltd
Hitachi Metals Ltd
DowCorning
Segment by Type
4H-SiC Substrate
6H-SiC Substrate
GaN-on-Si Substrate
Segment by Application
Consumer Electronics
Communication
Others
Production by Region
North America
Europe
China
Japan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America, Middle East & Africa
Mexico
Brazil
Turkey
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Type, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
The global Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market was valued at US$ 863 million in 2023 and is anticipated to reach US$ 1283.3 million by 2030, witnessing a CAGR of 5.8% during the forecast period 2024-2030.
5G is a key and cross-age technology that opens the era of the Internet of Everything, and all countries are grabbing market share. The Global Mobile Economy Development Report 2023 released by GSMA Intelligence pointed out that by the end of 2022, the number of global mobile users would exceed 5.4 billion. The mobile ecosystem supports 16 million jobs directly and 12 million jobs indirectly.
China is a leader in 5G technology. According to the latest statistics from the Ministry of Industry and Information Technology, China newly added 887,000 5G base stations in 2022 (currently reaching 2.312 million, accounting for more than 60% of the world's total), and 110 cities in China have reached gigabit city construction standard. According to the Digital China Development Report (2022) released by the State Internet Information Office, by the end of 2022, China had built a total of 2.312 million 5G base stations, with 561 million 5G users, accounting for more than 60% of the world.
This report aims to provide a comprehensive presentation of the global market for Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation), with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation).
Report Scope
The Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market size, estimations, and forecasts are provided in terms of output/shipments (Tons) and revenue ($ millions), considering 2023 as the base year, with history and forecast data for the period from 2019 to 2030. This report segments the global Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market comprehensively. Regional market sizes, concerning products by Type, by Application, and by players, are also provided.
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
The report will help the Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) manufacturers, new entrants, and industry chain related companies in this market with information on the revenues, production, and average price for the overall market and the sub-segments across the different segments, by company, by Type, by Application, and by regions.
Market Segmentation
By Company
Cree Inc.
Mitsubishi Chemical
Kyocera Corporation
Plessey Semiconductors
IQE lpc
MonoCrystal
Sumco Corp
Sumitomo Electric Industries, Ltd
Hitachi Metals Ltd
DowCorning
Segment by Type
4H-SiC Substrate
6H-SiC Substrate
GaN-on-Si Substrate
Segment by Application
Consumer Electronics
Communication
Others
Production by Region
North America
Europe
China
Japan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
China Taiwan
Southeast Asia
India
Latin America, Middle East & Africa
Mexico
Brazil
Turkey
GCC Countries
Chapter Outline
Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by region, by Type, by Application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Detailed analysis of Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) manufacturers competitive landscape, price, production and value market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Production/output, value of Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) by region/country. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 4: Consumption of Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 5: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 6: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: The main points and conclusions of the report.
Frequently Asked Questions
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