China Radio-frequency Power Semiconductor Devices Market Research Report 2018

SKU ID : QYR- 11061660

Publishing Date : 02-Feb-2018

No. of pages : 107


  • The global Radio-frequency Power Semiconductor Devices market is valued at XX million USD in 2016 and is expected to reach XX million USD by the end of 2022, growing at a CAGR of XX% between 2016 and 2022.

    China plays an important role in global market, with market size of xx million USD in 2016 and will be xx million USD in 2022, with a CAGR of xx%.

    This report studies the Radio-frequency Power Semiconductor Devices development status and future trend in China, focuses on top players in China, also splits Radio-frequency Power Semiconductor Devices by type and by applications, to fully and deeply research and reveal the market general situation and future forecast.

    The major players in China market include
    Infineon Technologies
    RFHIC Corporation
    Wolfspeed (Cree)
    WIN Semiconductor
    Ampleon Netherlands
    Fujitsu Semiconductor
    Integra Technologies
    Sumitomo Electric Device Innovations

    Geographically, this report splits the China market into six regions,
    South China
    East China
    Southwest China
    Northeast China
    North China
    Central China
    Northwest China

    On the basis of product, this report displays the sales volume (K Units), revenue (Million USD), product price (USD/Unit), market share and growth rate of each type, primarily split into
    Galium Nitride (GaN)
    Galium Arsenide (GaAs)
    Laterally Diffused Metal Oxide Semiconductor (LDMOS)

    On the basis of the end users/application, this report covers
    Military, Defense, and Aerospace

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