Silicon carbide, also known as carborundum, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.
The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.
In 2019, the market size of Silicon Carbide (SIC) Power Semiconductors is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of xx% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for Silicon Carbide (SIC) Power Semiconductors.

This report studies the global market size of Silicon Carbide (SIC) Power Semiconductors, especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
This study presents the Silicon Carbide (SIC) Power Semiconductors production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.

In global market, the following companies are covered:
Infineon Technologies AG
Microsemi
General Electric
Power Integrations
Toshiba
Fairchild Semiconductor
STMicroelectronics
NXP Semiconductors
Tokyo Electron Limited
Renesas Electronics Corporation

Market Segment by Product Type
Power Products
Discrete Products
Others

Market Segment by Application
IT & Telecom
Aerospace & Defense
Industrial
Energy & Power
Electronics
Automotive
Healthcare
Others

Key Regions split in this report: breakdown data for each region.
United States
China
European Union
Rest of World (Japan, Korea, India and Southeast Asia)

The study objectives are:
To analyze and research the Silicon Carbide (SIC) Power Semiconductors status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
To present the key Silicon Carbide (SIC) Power Semiconductors manufacturers, presenting the sales, revenue, market share, and recent development for key players.
To split the breakdown data by regions, type, companies and applications
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market

In this study, the years considered to estimate the market size of Silicon Carbide (SIC) Power Semiconductors are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025