The HEMT or High Electron Mobility Transistor is a form of field effect transistor, FET, that is used to provide very high levels of performance at microwave frequencies. The HEMT offers a combination of low noise figure combined with the ability to operate at the very high microwave frequencies. Accordingly the device is used in areas of RF design where high performance is required at very high RF frequencies.
The development of the HEMT took many years. It was not until many years after the basic FET was established as a standard electronics component that the HEMT appeared on the market. Now with their cost somewhat less, they are more widely used, even finding uses in the mobile telecommunications as well as a variety of microwave radio communications links, and many other RF design applications.
In 2019, the market size of High Electron Mobility Transistor (HEMT) is xx million US$ and it will reach xx million US$ in 2025, growing at a CAGR of xx% from 2019; while in China, the market size is valued at xx million US$ and will increase to xx million US$ in 2025, with a CAGR of xx% during forecast period.
In this report, 2018 has been considered as the base year and 2019 to 2025 as the forecast period to estimate the market size for High Electron Mobility Transistor (HEMT).

This report studies the global market size of High Electron Mobility Transistor (HEMT), especially focuses on the key regions like United States, European Union, China, and other regions (Japan, Korea, India and Southeast Asia).
This study presents the High Electron Mobility Transistor (HEMT) production, revenue, market share and growth rate for each key company, and also covers the breakdown data (production, consumption, revenue and market share) by regions, type and applications. history breakdown data from 2014 to 2019, and forecast to 2025.
For top companies in United States, European Union and China, this report investigates and analyzes the production, value, price, market share and growth rate for the top manufacturers, key data from 2014 to 2019.

In global market, the following companies are covered:
Fujitsu
Mitsubishi Electric
Ampleon
Qorvo
Oki Electric
Lake Shore Cryotronics
Cree
TOSHIBA
Microsemi

Market Segment by Product Type
GaN
GaN/SiC
GaAs

Market Segment by Application
Energy & Power
Consumer Electronics
Inverter & UPS
Industrial

Key Regions split in this report: breakdown data for each region.
United States
China
European Union
Rest of World (Japan, Korea, India and Southeast Asia)

The study objectives are:
To analyze and research the High Electron Mobility Transistor (HEMT) status and future forecast in United States, European Union and China, involving sales, value (revenue), growth rate (CAGR), market share, historical and forecast.
To present the key High Electron Mobility Transistor (HEMT) manufacturers, presenting the sales, revenue, market share, and recent development for key players.
To split the breakdown data by regions, type, companies and applications
To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints and risks.
To identify significant trends, drivers, influence factors in global and regions
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market

In this study, the years considered to estimate the market size of High Electron Mobility Transistor (HEMT) are as follows:
History Year: 2014-2018
Base Year: 2018
Estimated Year: 2019
Forecast Year 2019 to 2025