RF power amplifiers continue to be a critical component in radio communications that transmit high-frequency signals. They are a core part of all base stations in cellular and mobile wireless infrastructure.
Countries such as China, India, Mexico, Brazil and some of the GCC and ASEAN members are likely to present significant market opportunities during the review period owing to the massive investments that are being made to improve the network infrastructure in these countries. Growing importance of power efficiency and IoT boom are some of the other factors expected to support the growth of the RF power amplifier market in the years to come.

The global RF Power Amplifier market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on RF Power Amplifier volume and value at global level, regional level and company level. From a global perspective, this report represents overall RF Power Amplifier market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of RF Power Amplifier in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their RF Power Amplifier manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.

The following manufacturers are covered:
NXP Semiconductors
Qualcomm, Inc.
Toshiba Corporation
Infineon Technologies
Broadcom Pte. Ltd.
Mitsubishi Corporation
Skyworks Solutions, Inc.
Murata Manufacturing Co., Ltd.
Analog Devices, Inc.
II-VI, Inc.

Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India

Segment by Type
<10 GHz
10-20 GHz
20-30 GHz
30-60 GHz
60+ GHz

Segment by Application
Consumer Electronics
Aerospace & Defense
Automotive
Medical
Others