Snapshot
Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM).
The global Resistive Random Access Memory market will reach Volume Million USD in 2017 and CAGR xx% 2011-2017. The report begins from overview of Industry Chain structure, and describes industry environment, then analyses market size and forecast of Resistive Random Access Memory by product, region and application, in addition, this report introduces market competition situation among the vendors and company profile, besides, market price analysis and value chain features are covered in this report.
Product Type Coverage (Market Size & Forecast, Major Company of Product Type etc.):
180 nm
40nm
Others
Company Coverage (Sales Revenue, Price, Gross Margin, Main Products etc.):
PSCS
Adesto
Crossbar
Fujitsu
Intel
Samsung Electronics
TSMC
Micron
SK Hynix
SMIC
4DS Memory
Weebit Nano
Application Coverage (Market Size & Forecast, Different Demand Market by Region, Main Consumer Profile etc.):
Computer
IoT
Consumer Electronics
Medical
Others
Region Coverage (Regional Output, Demand & Forecast by Countries etc.):
North America
Europe
Asia-Pacific
South America
Middle East & Africa