China Radio-frequency Power Semiconductor Devices Market Research Report 2018

SKU ID :QYR-11061660 | Published Date: 02-Feb-2018 | No. of pages: 107
The global Radio-frequency Power Semiconductor Devices market is valued at XX million USD in 2016 and is expected to reach XX million USD by the end of 2022, growing at a CAGR of XX% between 2016 and 2022.

China plays an important role in global market, with market size of xx million USD in 2016 and will be xx million USD in 2022, with a CAGR of xx%.

This report studies the Radio-frequency Power Semiconductor Devices development status and future trend in China, focuses on top players in China, also splits Radio-frequency Power Semiconductor Devices by type and by applications, to fully and deeply research and reveal the market general situation and future forecast.

The major players in China market include
Infineon Technologies
Ampleon
RFHIC Corporation
Wolfspeed (Cree)
Qorvo
WIN Semiconductor
MACOM
Ampleon Netherlands
Broadcom
Toshiba
Fujitsu Semiconductor
Integra Technologies
Microsemi
Sumitomo Electric Device Innovations

Geographically, this report splits the China market into six regions,
South China
East China
Southwest China
Northeast China
North China
Central China
Northwest China

On the basis of product, this report displays the sales volume (K Units), revenue (Million USD), product price (USD/Unit), market share and growth rate of each type, primarily split into
Galium Nitride (GaN)
Galium Arsenide (GaAs)
Laterally Diffused Metal Oxide Semiconductor (LDMOS)

On the basis of the end users/application, this report covers
Telecommunication
Industrial
Medical
Military, Defense, and Aerospace

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