Global NAND Flash Memory Market - Growth, Trends, and Forecast (2019 - 2024)

SKU ID :INH-13487132 | Published Date: 01-Mar-2019 | No. of pages: 120
1 INTRODUCTION 1.1 Study Deliverables 1.2 Study Assumptions 1.3 Scope of the Study 2 RESEARCH METHODOLOGY 3 EXECUTIVE SUMMARY 4 MARKET DYNAMICS 4.1 Market Overview 4.2 Introduction to Market Drivers and Restraints 4.3 Market Drivers 4.3.1 Increasing Demand For Low-cost Storage Solutions 4.3.2 Increasing Penetration Of Smart Devices 4.4 Market Restraints 4.4.1 High Initial Cost Of Flash Memory 4.5 Industry Attractiveness - Porter's Five Force Analysis 4.5.1 Threat of New Entrants 4.5.2 Bargaining Power of Buyers/Consumers 4.5.3 Bargaining Power of Suppliers 4.5.4 Threat of Substitute Products 4.5.5 Intensity of Competitive Rivalry 5 MARKET SEGMENTATION 5.1 Type 5.1.1 SLC (One-bit Per Cell) 5.1.2 MLC (Two-bit Per Cell) 5.1.3 TLC (Three-bit Per Cell) 5.2 Structure 5.2.1 2-D Structure 5.2.2 3-D Structure 5.3 Application 5.3.1 Smartphone 5.3.2 SSD 5.3.3 Memory Card 5.3.4 Tablet 5.3.5 Other Applications 5.4 Geography 5.4.1 North America 5.4.2 Europe 5.4.3 Asia Pacific 5.4.4 Latin America 5.4.5 Middle East and Africa 6 COMPETITIVE LANDSCAPE 6.1 Vendor Market Share 6.2 Company Profiles 6.2.1 Samsung Electronics Co. Ltd 6.2.2 Toshiba Corporation 6.2.3 Micron Technology Inc. 6.2.4 SK Hynix Inc. 6.2.5 Intel Corporation 6.2.6 Renesas Electronics Corporation 6.2.7 SanDisk Corp. 6.2.8 Powerchip Technology Corporation 6.2.9 Cypress Semiconductor Corporation 7 MARKET OPPORTUNITIES AND FUTURE TRENDS
- Samsung Electronics Co. Ltd - Toshiba Corporation - Micron Technology Inc. - SK Hynix Inc. - Intel Corporation - Renesas Electronics Corporation - SanDisk Corp. - Powerchip Technology Corporation - Cypress Semiconductor Corporation
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