GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.
Over the next five years, LPI(LP Information) projects that GaN Power Devices will register a xx% CAGR in terms of revenue, reach US$ xx million by 2023, from US$ xx million in 2017.

This report studies the global market, especially in North America, Europe, Asia-Pacific, South America, Middle East and Africa, focuses on the top 5 players in each region, with sales, price, revenue and market share from 2013 to 2018, the top players:
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors

Market Segment by Regions, this report splits Global into several key Regions, with sales, revenue, market share of top players in these regions, from 2013 to 2018 (forecast), like
North America (United States, Canada and Mexico)
Asia-Pacific (China, Japan, Southeast Asia, India and Korea)
Europe (Germany, UK, France, Italy and Russia etc.)
South America (Brazil, Chile, Peru and Argentina)
Middle East and Africa (Egypt, South Africa, Saudi Arabia)

Split by Product Types, with sales, revenue, price, market share of each type, can be divided into
600V
Other
Split by applications, this report focuses on sales, market share and growth rate in each application, can be divided into
Server and Other IT Equipments
High-efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices