The global Silicon Carbide market is valued at XX million USD in 2016 and is expected to reach XX million USD by the end of 2017, growing at a CAGR of XX% between 2016 and 2022.

Japan plays an important role in global market, with market size of xx million USD in 2016 and will be xx million USD in 2017, with a CAGR of xx%.

This report, with focus on top players in the global and Japan, studies the Silicon Carbide market's development status and future trend in the global and Japan. It splits Silicon Carbide market by type and by applications to fully and deeply research and reveal market profile and prospect.

The major players include
Infineon Technologies AG; CREE Inc. (Wolfspeed)
ROHM Semiconductor (Japan)
STMicroelectronics N.V. (Switzerland)
ON Semiconductor (US)
Toshiba Corporation (Japan)
General Electric (US)
Fuji Electric Co., Ltd. (Japan)
Renesas Electronics Corporation (Japan)
Dow Corning Corporation (US)
GeneSiC Semiconductor Inc. (US)
Global Power Technologies Group (US)
TanKeBlue Semiconductor Co. Ltd. (China)
Microsemi Corporation (US)
Central Semiconductor Corporation (US)
Ascatron AB (Sweden)

Geographically, this report splits the Global market into the following regions:
Asia Pacific
Japan
Tokyo
Yokohama
Osaka
Nagoya
Others
China
Korea
India
Others
Europe
France
Germany
United Kingdom
Italy
Russia
Others
North America
United States
Canada
Latin America
Brazil
Mexico
Others
Southeast Asia
Singapore
Malaysia
Vietnam
Myanmar
Thailand
Indonesia
Philippines
Others
Middle East & Africa
Saudi Arabia
Iran
UAE
Turkey
Israel
Egypt
South Africa
Others

On the basis of product, the Silicon Carbide market is primarily split into
By Device
SIC discrete devices
SiC bare die
By Wafer Size
2 Inch
4 Inch
6-Inch and above

Key Applications
RF Device and Cellular Base Station
Power Grid Device
Flexible AC Transmission Systems (FACTS)
High-Voltage, Direct Current (HVDC)
Power Supply and Inverter
Lighting Control
Industrial Motor Drive
Flame Detector
Other