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The HEMT or High Electron Mobility Transistor is a form of field effect transistor, FET, that is used to provide very high levels of performance at microwave frequencies. The HEMT offers a combination of low noise figure combined with the ability to operate at the very high microwave frequencies. Accordingly the device is used in areas of RF design where high performance is required at very high RF frequencies.
The development of the HEMT took many years. It was not until many years after the basic FET was established as a standard electronics component that the HEMT appeared on the market. Now with their cost somewhat less, they are more widely used, even finding uses in the mobile telecommunications as well as a variety of microwave radio communications links, and many other RF design applications.
The global High Electron Mobility Transistor (HEMT) market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on High Electron Mobility Transistor (HEMT) volume and value at global level, regional level and company level. From a global perspective, this report represents overall High Electron Mobility Transistor (HEMT) market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of High Electron Mobility Transistor (HEMT) in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their High Electron Mobility Transistor (HEMT) manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.
The following manufacturers are covered:
Fujitsu
Mitsubishi Electric
Ampleon
Qorvo
Oki Electric
Lake Shore Cryotronics
Cree
TOSHIBA
Microsemi
Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India
Segment by Type
GaN
GaN/SiC
GaAs
Segment by Application
Energy & Power
Consumer Electronics
Inverter & UPS
Industrial
The development of the HEMT took many years. It was not until many years after the basic FET was established as a standard electronics component that the HEMT appeared on the market. Now with their cost somewhat less, they are more widely used, even finding uses in the mobile telecommunications as well as a variety of microwave radio communications links, and many other RF design applications.
The global High Electron Mobility Transistor (HEMT) market was valued at xx million US$ in 2018 and will reach xx million US$ by the end of 2025, growing at a CAGR of xx% during 2019-2025.
This report focuses on High Electron Mobility Transistor (HEMT) volume and value at global level, regional level and company level. From a global perspective, this report represents overall High Electron Mobility Transistor (HEMT) market size by analyzing historical data and future prospect.
Regionally, this report categorizes the production, apparent consumption, export and import of High Electron Mobility Transistor (HEMT) in North America, Europe, China, Japan, Southeast Asia and India.
For each manufacturer covered, this report analyzes their High Electron Mobility Transistor (HEMT) manufacturing sites, capacity, production, ex-factory price, revenue and market share in global market.
The following manufacturers are covered:
Fujitsu
Mitsubishi Electric
Ampleon
Qorvo
Oki Electric
Lake Shore Cryotronics
Cree
TOSHIBA
Microsemi
Segment by Regions
North America
Europe
China
Japan
Southeast Asia
India
Segment by Type
GaN
GaN/SiC
GaAs
Segment by Application
Energy & Power
Consumer Electronics
Inverter & UPS
Industrial
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